丝印：36P4LLF6；Package：DPAK；P-channel 40 V, 0.0175 廓 typ.,36 A, STripFET??F6 Power MOSFET in a DPAK package

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STMICROELECTRONICS

意法半导体

P-Channel 60 V (D-S) MOSFET

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VBSEMI

微碧半导体

P沟道40 V、0.0175 Ohm典型值、36 A STripFET F6，DPAK封装

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体

TO-252

ST

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TO-252-3

ST

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