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D35NF06L

N-channel60V,0.014Ω,35ASTripFET™IIPowerMOSFETinaDPAKpackage

Description ThisPowerMOSFEThasbeendevelopedusing STMicroelectronics’uniqueSTripFETprocess, whichisspecificallydesignedtominimizeinput capacitanceandgatecharge.Thisrendersthe devicesuitableforuseasprimaryswitchin advancedhigh-efficiencyisolatedDC-DC converters

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD35NF06

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

STD35NF06

N-channel60V-0.018廓-35A-DPAKSTripFET??IIPowerMOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD35NF06

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD35NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharg e.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=35A RDS(ON),20mΩ(Typ)@VGS=10V RDS(ON),16mΩ(Typ)@VGS=4.5V AdvancedTrenchTec

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

STD35NF06

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD35NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharg e.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=35A RDS(ON),20mΩ(Typ)@VGS=10V RDS(ON),16mΩ(Typ)@VGS=4.5V AdvancedTrenchTechn

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

STD35NF06L

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD35NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharg e.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=35A RDS(ON),20mΩ(Typ)@VGS=10V RDS(ON),16mΩ(Typ)@VGS=4.5V AdvancedTrenchTec

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

STD35NF06L

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD35NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharg e.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=35A RDS(ON),20mΩ(Typ)@VGS=10V RDS(ON),16mΩ(Typ)@VGS=4.5V AdvancedTrenchTechn

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

STD35NF06L

N-CHANNEL60V-0.014ohm-35ADPAKSTripFET?줚IMOSFET

Description ThisPowerMOSFEThasbeendevelopedusingSTMicroelectronics’uniqueSTripFETprocess,whichisspecificallydesignedtominimizeinputcapacitanceandgatecharge.Thisrendersthedevicesuitableforuseasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersforte

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

供应商型号品牌批号封装库存备注价格
ST/意法
23+
TO-252
50000
全新原装正品现货,支持订货
询价
ST/意法
23+
TO-252
50000
全新原装正品现货,支持订货
询价
ST
23+
SOP-8
8650
受权代理!全新原装现货特价热卖!
询价
ST
21+
TO-252
12588
原装现货价格优势
询价
ST
24+
TO-252
7500
询价
ST
1415+
TO-252(DPAK)
28500
全新原装正品,优势热卖
询价
ST
17+
TO-252
6200
询价
ST
2016+
TO-252
6528
房间原装进口现货假一赔十
询价
ST
05+
原厂原装
2086
只做全新原装真实现货供应
询价
ST
24+
09+
6
原装现货假一罚十
询价
更多STD35NF06LMOS(场效应管)供应商 更新时间2025-7-28 13:01:00