N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET

DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 4

文件：86.83 Kbytes 页数：8 Pages

STMICROELECTRONICS

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N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET

DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 4

文件：86.76 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET

DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 4

文件：86.83 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-channel 450V - 4.1 - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Suc

文件：381.91 Kbytes 页数：11 Pages

STMICROELECTRONICS

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丝印：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

文件：332.08 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 450V - 4.1 - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET

文件：381.91 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 450 V, 4.1 , 1.5 A, IPAK SuperMESH Power MOSFET

文件：262.62 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 450V - 4.1 - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET

文件：381.91 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 450 V, 4.1 , 1.5 A, IPAK SuperMESH Power MOSFET

文件：262.62 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道450V 4.1OHM 1.5A IPAK SuperMESH功率MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.\n\n Such series complem • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested \n• New high voltage benchmark;

ST

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