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STD18N55M5数据手册ST中文资料规格书
STD18N55M5规格书详情
描述 Description
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
特性 Features
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
技术参数
- 制造商编号
：STD18N55M5
- 生产厂家
：ST
- Package
：DPAK
- Grade
：Industrial
- VDSS(V)
：550
- RDS(on)_max(@ VGS=10V)(Ω)
：0.192
- Drain Current (Dc)_max(A)
：16
- PTOT_max(W)
：110
- Qg_typ(nC)
：31
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
16900 |
原装，正品 |
询价 | ||
ST/意法 |
24+ |
TO-252 |
9000 |
只做原装，欢迎询价，量大价优 |
询价 | ||
ST/意法 |
21+ |
TO252 |
1172 |
询价 | |||
ST/意法半导体 |
23+ |
N/A |
20000 |
询价 | |||
ST |
21+ |
TO-252-3 |
21230 |
原装现货假一赔十 |
询价 | ||
ST |
24+ |
TO-252 |
18000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
ST/意法 |
2023+ |
TO252 |
1085 |
十五年行业诚信经营,专注全新正品 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST |
22+ |
TO252 |
12245 |
现货,原厂原装假一罚十! |
询价 |
