N沟道650 V、0.37 Ohm典型值、10 A MDmesh M2功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

100 avalanche tested

文件：556.22 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Zener-protected

文件：570.96 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Zener-protected

文件：570.96 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.37 廓 typ., 10 A MDmesh??M2 Power MOSFET in a TO-220FP ultra narrow leads package

文件：759.36 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体