首页 >STD13005FB其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNSiliconPowerTransistor Features •Highspeedswitching •VCEO(sus)=400V •SuitableforSwitchingRegulatorandMotorControl | AUK AUK corp | AUK | ||
SWITCHINGREGULATORAPPLICATIONS SWITCHINGREGULATORAPPLICATIONS Features •Highspeedswitching •VCEO(sus)=400V •SuitableforSwitchingRegulatorandMotorControl | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
NPNSiliconPowerTransistor SWITCHINGREGULATORAPPLICATIONS Features •Highspeedswitching •VCEO(sus)=400V •SuitableforSwitchingRegulatorandMotorControl | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
SWITCHINGREGULATORAPPLICATIONS SWITCHINGREGULATORAPPLICATIONS Features •Highspeedswitching •VCEO(sus)=400V •SuitableforSwitchingRegulatorandMotorControl | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
SWITCHINGREGULATORAPPLICATIONS | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=400V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):1.5V(Max)@IC=1.6A APPLICATIONS ·ElectronicBallastFluorescentLighting ·FlybackandForwardSingleTransistor LowPowerConverters | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Highvoltagecapability | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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