首页>STD12N65M5>规格书详情
STD12N65M5中文资料意法半导体数据手册PDF规格书
STD12N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100 avalanche tested
Applications
Switching applications
产品属性
- 型号：
STD12N65M5
- 功能描述：
MOSFET POWER MOSFET N-CH 650V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
124 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
STM |
2016+ |
SOT252 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ST |
13+ |
TO-252 |
35 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法 |
25+ |
TO252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
ST/意法 |
2450+ |
TO-252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
ST |
24+ |
原厂原封 |
6523 |
进口原装公司百分百现货可出样品 |
询价 | ||
STM |
20+ |
TO252 |
32970 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
SOT252 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
SGS |
25+ |
DPAK |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 |
