N-channel 600 V, 0.550 (ohm) typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package

文件：807.13 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package

ST

意法半导体

N-channel 600 V, 0.550 typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to

文件：305.39 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in an I²PAKFP package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhan

文件：303.63 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 5x6 HV package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhan

文件：618.25 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体