STD10PF06-HXY规格书原装现货华轩阳电子-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
STD10PF06-HXY	文件：300 bytes Page：1 Pages	场效应管(MOSFET) ID:15A,VDSS:60V,RDON:95mR,VGS:20V,TYPE:P沟道,	HXY MOSFET 华轩阳电子	HXY MOSFET
D10PF06	文件：990.1 Kbytes Page：8 Pages	P-Channel 60-V (D-S) MOSFET 文件：990.1 Kbytes 页数：8 Pages	VBSEMI 微碧半导体	VBSEMI
STD10PF06	文件：299.15 Kbytes Page：9 Pages	P-CHANNEL 60V - 0.18 Ohm - 10A IPAK/DPAK STripFET II POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka 文件：299.15 Kbytes 页数：9 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STD10PF06	文件：85.72 Kbytes Page：8 Pages	P - CHANNEL 60V - 0.18 ohm - 10A TO-252 STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka 文件：85.72 Kbytes 页数：8 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多STD10PF06-HXY供应商更新时间2026-2-3 11:06:00