Very low intrinsic capacitances

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STMICROELECTRONICS

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N-Channel MOSFET uses advanced trench technology

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DOINGTER

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汽车级N沟道300 V、0.28 Ohm典型值、10 A MESH OVERLAY功率MOSFET，DPAK封装

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • AEC-Q101 qualified \n• Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge \n• 175 °C maximum junction temperature;

ST

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N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem

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STMICROELECTRONICS

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