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STB80NE06-10中文资料意法半导体数据手册PDF规格书
STB80NE06-10规格书详情
DESCRIPTION
This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
■ TYPICAL RDS(on) = 0.0085 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100 AVALANCHE TESTED
■ APPLICATION ORIENTED CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
APPLICATIONS
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
产品属性
- 型号：
STB80NE06-10
- 功能描述：
MOSFET RO 511-STB80NF06
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
1942+ |
TO-263 |
9852 |
只做原装正品现货或订货!假一赔十! |
询价 | ||
ST |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
ST |
22+ |
TO-263 |
35120 |
原装正品现货 |
询价 | ||
TI |
23+ |
TO-263 |
3200 |
正规渠道,只有原装! |
询价 | ||
24+ |
N/A |
1800 |
询价 | ||||
ST |
17+ |
TO-263 |
6200 |
询价 | |||
原装STM |
19+ |
TO-263 |
20000 |
询价 | |||
ST |
2447 |
SOT263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ST |
22+ |
SOT263 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ST |
20+ |
TO-263 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 |
