STB6NC80Z中文资料意法半导体数据手册PDF规格书
STB6NC80Z规格书详情
DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requested by a large variety of single-switch applications.
■ TYPICAL RDS(on) = 1.5Ω
■ EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES
■ 100 AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED
产品属性
- 型号：
STB6NC80Z
- 制造商：
STMICROELECTRONICS
- 制造商全称：
STMicroelectronics
- 功能描述：
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3263 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
22+ |
TO |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ST |
03+ |
TO-262 |
14 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
24+ |
TO-220 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 | ||
ST |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
ST |
2511 |
TO-263 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST |
23+ |
TO-263 |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
05+ |
原厂原装 |
3051 |
只做全新原装真实现货供应 |
询价 | ||
ST |
23+ |
TO-262 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST |
17+ |
D2PAK |
6200 |
询价 |
