STB6NB50中文资料意法半导体数据手册PDF规格书
STB6NB50规格书详情
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 1.35 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100 AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
产品属性
- 型号：
STB6NB50
- 功能描述：
MOSFET N-Ch 500 Volt 6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2511 |
TO-263 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST/意法 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ST/意法 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
24+ |
N/A |
2500 |
询价 | ||||
ST |
23+ |
TO-263 |
16900 |
正规渠道,只有原装! |
询价 | ||
ST/意法 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
ST |
06+ |
TO-263 |
8000 |
原装库存 |
询价 | ||
ST |
24+ |
TO-262 |
27500 |
原装正品,价格最低! |
询价 | ||
ST |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
ST(意法) |
23+ |
10000 |
只做全新原装,实单来 |
询价 |
