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STB55NF03L	文件：81.29 Kbytes Page：8 Pages	N-CHANNEL 30V - 0.01 ohm - 55A D2PAK STripFET] POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™ strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforea	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
STB55NF03L	文件：338.93 Kbytes Page：11 Pages	N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™ strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforea	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
STB55NF03L	文件：349.3 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STB55NF03L	文件：300 bytes Page：1 Pages	N-Channel 30V - 0.01 Ohm - 55A - D2PAK STripFET(TM) II POWER MOSFET; • TYPICAL RDS(on) = 0.01 Ω\n• LOW GATE CHARGE• OPTIMIZED FOR HIGH SWITCHING OPERATIONS\n• LOGIC LEVEL GATE DRIVE;	STSTMicroelectronics 意法半导体意法半导体集团	ST
STB55NF03L-1	文件：338.93 Kbytes Page：11 Pages	N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™ strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforea	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
STI55NF03L	文件：448.94 Kbytes Page：12 Pages	N-channel30V,0.01廓,55A,I짼PAKSTripFET??IIPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
STP55NF03L	文件：371.88 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STP55NF03L	文件：338.93 Kbytes Page：11 Pages	N-CHANNEL30V-0.01W-55ATO-220/D2PAK/I2PAKSTripFETIIPOWERMOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™ strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforea	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
STP55NF03L	文件：338.93 Kbytes Page：8 Pages	N-CHANNEL30V-0.01ohm-55ATO-220/D2PAK/I2PAKSTripFET??IIPOWERMOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™ strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforea	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS

技术参数

Package：
D2PAK
Grade：
Industrial
VDSS(V)：
30
RDS(on)_max(@ VGS=10V)(Ω)：
0.013
Drain Current (Dc)_max(A)：
55
PTOT_max(W)：
80
Qg_typ(nC)：
20

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	STB55NF03L	ST/意法	24+		3114	只做原厂渠道可追溯货源	询价
深圳市汇莱威科技有限公司	STB55NF03L	ST/意法	24+	TO-263	504116	免费送样原盒原包现货一手渠道联系	询价
深圳市一线半导体有限公司	STB55NF03L	ST	24+	TO-263	5000		询价
深圳市昌和盛利电子有限公司	STB55NF03L	ST	23+	TO-263	8795		询价
深圳市弘为电子有限公司	STB55NF03L	ST	24+	MSOP8	1000	原装现货假一罚十	询价
深圳市华斯顿科技有限公司	STB55NF03L	ST	25+23+	TO-263	32245	绝对原装正品全新进口深圳现货	询价
深圳市卓越微芯电子有限公司	STB55NF03L	ST	2020+	TO-263	9500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市澳亿芯电子科技有限公司	STB55NF03L	ST	08+		3114	普通	询价
深圳市科雨电子有限公司	STB55NF03L	ST/意法	237+	TO-263-2	10	就找我吧!--邀您体验愉快问购元件!	询价
深圳市威尔健半导体有限公司	STB55NF03L	ST/意法	23+	TO-263	50000	全新原装正品现货,支持订货	询价

更多STB55NF03L供应商更新时间2025-7-27 16:36:00

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