isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：349.3 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 30V - 0.01 ohm - 55A D2PAK STripFET] POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a

文件：81.29 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a

文件：338.93 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a

文件：338.93 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-Channel 30V - 0.01 Ohm - 55A - D2PAK STripFET(TM) II POWER MOSFET

• TYPICAL RDS(on) = 0.01 Ω\n• LOW GATE CHARGE• OPTIMIZED FOR HIGH SWITCHING OPERATIONS\n• LOGIC LEVEL GATE DRIVE;

ST

意法半导体