STB50NE08中文资料意法半导体数据手册PDF规格书

DESCRIPTION

This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.020 Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ LOW GATE CHARGE AT 100 °C

■ APPLICATION ORIENTED CHARACTERIZATION

■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)