N沟道300 V、0.037 Ohm典型值、53 A MDmesh M5功率MOSFET，D2PAK封装

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-bas • Designed for automotive applications and AEC-Q101 qualified \n• Amongst the best RDS(on)* area \n• High dv/dt capability \n• Excellent switching performance \n• Easy to drive \n• 100% avalanche tested;

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意法半导体

Excellent switching performance

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STMICROELECTRONICS

意法半导体

TO-263

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SOT263

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