汽车级N沟道600 V、0.085 Ohm典型值、34 A MDmesh DM2功率MOSFET，D2PAK封装

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shif • AEC-Q101 qualified \n• Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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Fast-recovery body diode

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STMICROELECTRONICS

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Extremely high dv/dt ruggedness

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STMICROELECTRONICS

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Automotive-grade N-channel 600 V, 0.085 廓 typ., 34 A MDmesh??DM2 Power MOSFET in a TO-247 package

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STMICROELECTRONICS

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