N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 53A@ TC=25℃ · Drain Source Voltage -VDSS= 300V(Min) · Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

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ISC

无锡固电

N沟道300 V、0.037 Ohm典型值、53 A MDmesh M5功率MOSFET，D2PAK封装

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and super • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

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意法半导体

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TO-263

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上传：深圳市得捷芯城科技有限公司

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SOT263

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SMD

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