丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：313.7 Kbytes 页数：2 Pages

ISC

无锡固电

Low gate charge and input capacitance

文件：561.56 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

汽车级N沟道650 V、0.058 Ohm典型值、42 A MDmesh M5功率MOSFET，D2PAK封装

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and super • AEC-Q101 qualified \n• Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

TO-263

ST

上传：深圳市得捷芯城科技有限公司

SOT263

ST

上传：深圳市向鸿伟业电子有限公司