汽车级N沟道400 V、50 mOhm典型值、41 A MDmesh DM6功率MOSFET，D2PAK封装

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching b • AEC-Q101 qualified \n• Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

ST

意法半导体

丝印：41N40DM6；Package：DPAK；Automotive-grade N-channel 400 V, 0.050 廓 typ., 41 A, MDmesh??DM6 Power MOSFET in a D짼PAK package

文件：460.71 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

TO-263

ST

上传：深圳市得捷芯城科技有限公司

SMD

ST

上传：深圳市芯通智达科技有限公司

SMD

ST

上传：深圳市芯通智达科技有限公司