N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET

文件：94.35 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET

ST

意法半导体

N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

文件：460.69 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.

文件：108.21 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.0913 Mbytes 页数：9 Pages

VBSEMI

微碧半导体