STB35N60DM2

N沟道600 V、0.094 Ohm典型值、28 A MDmesh DM2功率MOSFET，D2PAK封装; • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.\n\n

STB35N60DM2

Extremely low gate charge and input capacitance

STF35N60DM2

Extremelyhighdv/dtruggedness

STP35N60DM2

Extremelyhighdv/dtruggedness

STW35N60DM2

Extremelyhighdv/dtruggedness

Description ThishighvoltageN-channelPowerMOSFETis partoftheMDmesh™DM2fastrecoverydiode series.Itoffersverylowrecoverycharge(Qrr) andtime(trr)combinedwithlowRDS(on),rendering itsuitableforthemostdemandinghighefficiency convertersandidealforbridgetopologi