Automotive-grade N-channel 650 V, 0.15 typ., 20 A MDmesh M2 Power MOSFET in a D²PAK package

Features • AEC-Q101 qualified • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical

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汽车级N沟道650 V、0.15 Ohm典型值、20 A MDmesh M2功率MOSFET，D2PAK封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • AEC-Q101 qualified \n• Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

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TO-263

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上传：深圳市芯通智达科技有限公司