STB30200C

SCHOTTKY RECTIFIER

Features 150'CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnol

STB30200C

SCHOTTKY RECTIFIER

STB30200C

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 200V D2PAK

STF30200C

SCHOTTKYRECTIFIER

STF30200C

SCHOTTKYRECTIFIER

175°CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability TrenchMOSSchottkytechnology Th

STF30200CR

SCHOTTKYRECTIFIER

175°CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability TrenchMOSSchottkytechnology Th

STW30200C

SCHOTTKYRECTIFIER

150°CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability TrenchMOSSchottkytechnology Th

STW30200C

Highfrequencyoperation

V30200C

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106

V30200C

DualHighVoltageTrenchMOSBarrierSchottkyRectifier