isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.9 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 55V - 0.005 ohm -120A D짼PAK/TO-220/TO-247 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：551.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件：1.43245 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N沟道55V - 0.005 OHM -120A D2PAK STRIPFET II MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique \\\"Single Feature SizeTM\\\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable ma • 100% avalanche tested;

ST

意法半导体

N-CHANNEL 55V - 0.005 ohm -120A D짼PAK/TO-220/TO-247 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：551.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 55V - 0.005廓 - 120A - D2PAK/TO-220/TO-247 STripFET??II Power MOSFET

文件：561.12 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 55V - 0.005廓 - 120A - D2PAK/TO-220/TO-247 STripFET??II Power MOSFET

文件：561.12 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体