N-CHANNEL 600V-0.45ohm-13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：672.26 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.45廓 - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET

文件：623.58 Kbytes 页数：19 Pages

STMICROELECTRONICS

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N-Channel 650 V (D-S) MOSFET

文件：1.03993 Mbytes 页数：8 Pages

VBSEMI

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N-CHANNEL 600V-0.45ohm-13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：672.26 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V-0.45ohm-13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：672.26 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.45廓 - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET

文件：623.58 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.45廓 - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET

文件：623.58 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.45 Ohm典型值、13.5 A SuperMESH功率MOSFET，D2PAK封装

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high • Extremely high dv/dt capability \n• 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitances \n• Very good manufacturing repeatability \n• Zener-protected;

ST

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