N - CHANNEL 500V - 0.48ohm - 10A - I2PAK/D2PAK PowerMESH] MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

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STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

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VBSEMI

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N - CHANNEL 500V - 0.48ohm - 10A - I2PAK/D2PAK PowerMESH] MOSFET

ST

意法半导体

TO-263

ST

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TO263

ST

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