STAP57100中文资料意法半导体数据手册PDF规格书

特性 Features

■ Excellent thermal stability

■ Common source configuration push-pull

■ POUT = 100 W with 14 dB gain @ 860 MHz

■ ST advanced PowerSO-10RF - STAP package

■ Load mismatch 10:1 all phases

■ In compliance with the 2002/95/EC european

directive

描述 Description

The STAP57100 is a common source N-channel

enhancement-mode lateral field-effect RF power

transistor designed for broadband commercial

and industrial applications at frequencies up to

1.0 GHz. The STAP57100 is designed for high

gain and broadband performance operating in

common source mode at 28 V.