STAN250A中文资料意法半导体数据手册PDF规格书

DESCRIPTION

The SD8250 is a high power Class C transistor specifically designed for TACAN/DME pulsed output and driver applications.

This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF overdrive.

Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The SD8250 is supplied in the AMPAC Hermetic Metal/Ceramic package with internal Input/Output matching structures.

■ REFRACTORY/GOLD METALLIZATION

■ EMITTER SITE BALLASTED

■ 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE

■ LOW THERMAL RESISTANCE

■ INPUT/OUTPUT MATCHING

■ OVERLAY GEOMETRY

■ METAL/CERAMIC HERMETIC PACKAGE

■ POUT = 250 W MIN. WITH 8.0 dB GAIN