500 W, 50 V, 700 to 1200 MHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internal input matching for ease of use • Large positive and negative gate/source voltage range for improved class C operation • In compliance with the European Directive 2002/95/EC Description The STAC10

文件：490.69 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

500 W, 50 V, 700 to 1200 MHz RF power LDMOS transistor

The STAC1011-500 is a 50 V common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for avionics applications at frequencies up to 1250 MHz. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Internal input matching for ease of use \n• Large positive and negative gate/source voltage range for improved class C operation \n• In compliance with the European Directive 2002/95/EC;

ST

意法半导体

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The AM1011-500 device is a high power Class C transistor specifically designed for L-Band Avionic applications involving high pulse burst duty cycles. ■ POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN ■ 10:1 LOAD VSWR CAPABILITY @ 10µS., 1 DUTY ■ SIXPAC™ HERMETIC METAL/CERAMIC PACKAGE ■ E

文件：54.32 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

NPN RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1011-500 is a Common Base Device Designed for Pulsed L-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Hermetic Metal/Ceramic Package

文件：41.09 Kbytes 页数：1 Pages

ASI

50V Supply Voltage

文件：524.22 Kbytes 页数：3 Pages

ASI