40 V, 3 A, quad power half bridge

Features  Multipower BCD technology  Low input/output pulse width distortion  200 m RdsON complementary DMOS output stage  CMOS-compatible logic inputs  Thermal protection  Thermal warning output  Undervoltage protection  Short-circuit protection

文件：287.85 Kbytes 页数：16 Pages

STMICROELECTRONICS

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40 V, 3 A, quad power half bridge

Features  Multipower BCD technology  Low input/output pulse width distortion  200 m RdsON complementary DMOS output stage  CMOS-compatible logic inputs  Thermal protection  Thermal warning output  Undervoltage protection  Short-circuit protection

文件：287.85 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

40 V, 3 A, quad power half bridge

Features  Multipower BCD technology  Low input/output pulse width distortion  200 m RdsON complementary DMOS output stage  CMOS-compatible logic inputs  Thermal protection  Thermal warning output  Undervoltage protection  Short-circuit protection

文件：287.85 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

60 V 6 A quad power half bridge

Description STA516B is a monolithic quad half-bridge stage in Multipower BCD Technology. The device can be used as dual bridge or reconfigured, by connecting pin CONFIG to pins VDD, as a single bridge with double-current capability or as a half bridge (binary mode) with half-current capability.

文件：179.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

65 V, 7.5 A quad power half bridge

Features • Low input/output pulse width distortion • 200 mΩ RdsON complementary DMOS output stage • CMOS compatible logic inputs • Thermal protection • Thermal warning output • Undervoltage protection

文件：627.59 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

65 V, 7.5 A quad power half bridge

Features • Low input/output pulse width distortion • 200 mΩ RdsON complementary DMOS output stage • CMOS compatible logic inputs • Thermal protection • Thermal warning output • Undervoltage protection

文件：627.59 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

65 V, 7.5 A quad power half bridge

Features • Low input/output pulse width distortion • 200 mΩ RdsON complementary DMOS output stage • CMOS compatible logic inputs • Thermal protection • Thermal warning output • Undervoltage protection

文件：627.59 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

60 V 6 A quad power half bridge

Description STA516B is a monolithic quad half-bridge stage in Multipower BCD Technology. The device can be used as dual bridge or reconfigured, by connecting pin CONFIG to pins VDD, as a single bridge with double-current capability or as a half bridge (binary mode) with half-current capability.

文件：179.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

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500 W FFX digital amplifier power stage

Features • Output Power at 56 V supply voltage – 2 x 250 W at 10% THD + N into 6 Ω BTL – 2 x 200 W at 10% THD + N into 8 Ω BTL – 4 x 130 W at 10% THD + N into 3 Ω SE – 4 x 100 W at 10% THD + N into 4 Ω SE – 1 x 480 W at 10% THD + N into 3 Ω PBTL – 1 x 380 W at 10% TH

文件：468.58 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

500 W FFX digital amplifier power stage

Features • Output Power at 56 V supply voltage – 2 x 250 W at 10% THD + N into 6 Ω BTL – 2 x 200 W at 10% THD + N into 8 Ω BTL – 4 x 130 W at 10% THD + N into 3 Ω SE – 4 x 100 W at 10% THD + N into 4 Ω SE – 1 x 480 W at 10% THD + N into 3 Ω PBTL – 1 x 380 W at 10% TH

文件：468.58 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体