4K 256 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 4K bit memory is organized as 256 x 16 bit wo

文件：124.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 4K bit memory is organized as 256 x 16 bit wo

文件：124.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 4K bit memory is organized as 256 x 16 bit wo

文件：124.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 4K bit memory is organized as 256 x 16 bit wo

文件：124.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 4K bit memory is organized as 256 x 16 bit wo

文件：124.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 4K bit memory is organized as 256 x 16 bit wo

文件：124.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 4K bit memory is organized as 256 x 16 bit wo

文件：124.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 4K bit memory is organized as 256 x 16 bit wo

文件：124.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 4K bit memory is organized as 256 x 16 bit wo

文件：124.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 4K bit memory is organized as 256 x 16 bit wo

文件：124.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体