4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM

DESCRIPTION This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V ± 10 and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66. The ST93C66 is a 4K bit Electrically Erasable ProgrammableMemory(EEPROM) fabricatedwith SGS-

文件：107.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM

DESCRIPTION This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V ± 10 and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66. The ST93C66 is a 4K bit Electrically Erasable ProgrammableMemory(EEPROM) fabricatedwith SGS-

文件：107.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM

DESCRIPTION This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V ± 10 and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66. The ST93C66 is a 4K bit Electrically Erasable ProgrammableMemory(EEPROM) fabricatedwith SGS-

文件：107.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM

DESCRIPTION This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V ± 10 and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66. The ST93C66 is a 4K bit Electrically Erasable ProgrammableMemory(EEPROM) fabricatedwith SGS-

文件：107.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM

DESCRIPTION This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V ± 10 and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66. The ST93C66 is a 4K bit Electrically Erasable ProgrammableMemory(EEPROM) fabricatedwith SGS-

文件：107.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM

DESCRIPTION This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V ± 10 and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66. The ST93C66 is a 4K bit Electrically Erasable ProgrammableMemory(EEPROM) fabricatedwith SGS-

文件：107.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM

DESCRIPTION This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V ± 10 and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66. The ST93C66 is a 4K bit Electrically Erasable ProgrammableMemory(EEPROM) fabricatedwith SGS-

文件：107.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM

DESCRIPTION This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V ± 10 and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66. The ST93C66 is a 4K bit Electrically Erasable ProgrammableMemory(EEPROM) fabricatedwith SGS-

文件：107.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

1K 64 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS46 and ST93CS47 are 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricatedwith SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 1K bit memory is organized as 64 x 16 bit words.Th

文件：124.09 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

1K 64 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS46 and ST93CS47 are 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricatedwith SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 1K bit memory is organized as 64 x 16 bit words.Th

文件：124.09 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体