CE conformity

FEATURES J J I4 « CE conformity * Built to meet European Standard BS EN 60335-2-45 ! * Full power range from 12 to 50 watt * Wide choice of input voltages * “Thermally balanced” fixed setting and “In Handle” adjustable temperature models * Wide range of soldering and desoldering-b

文件：598.09 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：ST6；Package：SOT-23-6L；30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@4.0A

文件：385.15 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：ST6；Package：SOT-23-6L；30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@4.0A

文件：385.15 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：ST6；Package：SOT-23-6L；30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@4.0A

文件：444.52 Kbytes 页数：6 Pages

PANJIT

強茂

ST portfolio for smartphone platforms

TYPICAL APPLICATIONS • Contactless test factory automation and after sales services • Life proof hole-less personal devices • Contactless accessories • Contactless personal equipment docking hub and data transfer KEY FEATURE • True 10-finger multi touch • High SNR, hign noise immunity •

文件：3.51257 Mbytes 页数：32 Pages

STMICROELECTRONICS

意法半导体

丝印：600K；Package：SOT-32；LOW VOLTAGE NPN POWER TRANSISTOR

Description The ST631K is manufactured by low voltage Epitaxial Base technology and it is housed in SOT-32 plastic package. The complementary PNP type is ST600K. Features ■ LOW SATURATION VOLTAGE Applications ■ SCANNING VELOCITY MODULATION IN CRT DISPLAYS ■ MEDIUM POWER LINEAR AND SWITCH

文件：56.67 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

LOW VOLTAGE PNP POWER TRANSISTOR

Description The ST631K is manufactured by low voltage Epitaxial Base technology and it is housed in SOT-32 plastic package. The complementary PNP type is ST600K. Features ■ LOW SATURATION VOLTAGE Applications ■ SCANNING VELOCITY MODULATION IN CRT DISPLAYS ■ MEDIUM POWER LINEAR AND SWITCHING

文件：56.11 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Silicon Dual Power Rectifier

Silicon Dual Power Rectifier ● Glass passivated die ● Glass to metal seal construction ● VRRM 200 to 1000V ● 400 A Surge Rating ● Available as common anode, common cathode, or doubleer

文件：161.35 Kbytes 页数：3 Pages

Microsemi

美高森美

SCHOTTKY RECTIFIER

Features  150 'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technol

文件：366.58 Kbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

文件：567.89 Kbytes 页数：7 Pages

SMCDIODE

桑德斯微电子