SCHOTTKY RECTIFIER

Features  150 °C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Trench MOS Schottky technology  Terminals finish: 100 Pure Tin  This is a Pb − Free Dev

文件：749.65 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

Ultra Low VF Trench Schottky Rectifiers

SMC

桑德斯微电子

SCHOTTKY RECTIFIER

 150 °C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Trench MOS Schottky technology  Terminals finish: 100 Pure Tin  This is a Pb − Free Device  All

文件：762.41 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

GERMANIUM PNP TRANSISTORS

文件：2.44311 Mbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON NPN POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 40250 is a silicon NPN power transistor mounted in a hermetically sealed metal case, designed for general purpose amplifier applications.

文件：398.05 Kbytes 页数：3 Pages

CENTRAL

THINKI 40A,250V Low Vf Series Common Cathode Super Barrier Rectifier

Features  Low forward voltage drop  ThinkiSemi latest matured super barrier rectifier  High current capability  High surge current capability  Low reverse leakage current Application  Inverter/UPS  Plating Power Supply/SMPS  Car Audio Amplifier and Sound Device System

文件：1.51904 Mbytes 页数：4 Pages

THINKISEMI

思祁半导体