N Channel Enhancement Mode MOSFET

DESCRIPTION ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applic

文件：667.53 Kbytes 页数：6 Pages

STANSON

司坦森

N Channel Enhancement Mode MOSFET

文件：667.54 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Tranch MOSFET

Stanson

司坦森

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：153.48 Kbytes 页数：7 Pages

SAMHOP

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：481.31 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：124.74 Kbytes 页数：7 Pages

SAMHOP

三合微科