SCHOTTKY RECTIFIER

Features  150'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

文件：370.66 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY BARRIER RECTIFIER

Features  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Trench MOS Schottky technology  Terminals finish: 100 Pure Tin  This is a Pb − Free Device  All SMC parts ar

文件：762.5 Kbytes 页数：5 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY BARRIER RECTIFIER

Features  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Trench MOS Schottky technology  Terminals finish: 100 Pure Tin  This is a Pb − Free Device  All SMC parts ar

文件：762.5 Kbytes 页数：5 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  Ultralow forward voltage drop  Very small conduction losses  Negligible switching losses  Extremely fast switching  Low thermal resistance  Avalanche capability specified  Thin package: 1 mm  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Ad

文件：289.62 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

Silicon Dual Power Rectifier

Silicon Dual Power Rectifier ● Glass Passivated Die ● Glass to metal seal construction ● VRRM 200 to 1000V ● 250A Surge Rating ● Available as Common Anode, Common Cathode, or Doubler

文件：160.85 Kbytes 页数：3 Pages

MICROSEMI

美高森美

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Trench MOS Schottky technology  This is a Pb − Free Device 

文件：562.21 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  Ultralow forward voltage drop  Very small conduction losses  Negligible switching losses  Extremely fast switching  Low thermal resistance  Avalanche capability specified  Thin package: 1 mm  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Ad

文件：284.5 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  125'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

文件：241.03 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

Silicon Dual Power Rectifier

Silicon Dual Power Rectifier ● Glass Passivated Die ● Glass to metal seal construction ● VRRM 200 to 1000V ● 250A Surge Rating ● Available as Common Anode, Common Cathode, or Doubler

文件：160.85 Kbytes 页数：3 Pages

MICROSEMI

美高森美

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

文件：312.91 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子