10 W, 28 V, HF to 1.6 GHz RF Power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally input matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the european directive 2002/95/EC Description The ST160

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STMICROELECTRONICS

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HF至1.6 GHz的10W 28V RF功率LDMOS晶体管

The ST16010 is a 10 W, 28 V LDMOS transistor designed for wideband radio, Avionics and ISM applications at frequencies up to 1.6 GHz. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Large positive and negative gate-source voltage range for improved class C operation \n• In compliance with the european directive 2002/95/EC;

ST

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SERIAL INTERFACE TRANSMISSION ENCODER

DESCRIPTION TheSTV1601Ais aHybrid IC encoderthat converts parallel data into serial data for a serial transmission line. FUNCTIONS • Parallel-to-serial conversion • Scrambler : Modulo - 2 division by G(x) = (x9 + x4 + 1) (x + 1) • PLL for serial clock generation • PLL lock detection • Sync

文件：244.87 Kbytes 页数：17 Pages

STMICROELECTRONICS

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ISOLATION ULTRAFST SWITCHING RECTIFIER(VOLTAGE- 50 to 800 Volts CURRENT - 16.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O . Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228. • Low power loss,high efficiency. • Low forward voltage, high current capability. • High surge cap

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PANJIT

強茂

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

文件：60.37 Kbytes 页数：5 Pages

PANASONIC

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