ST14C02C-S21中文资料意法半导体数据手册PDF规格书

DESCRIPTION

This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The memory operates with a power supply as low as 3 V.

■ Single Supply Voltage (3 V to 5.5 V)

■ Two Wire I2C Serial Interface

■ BYTE and MULTBYTE WRITE (up to 4 Bytes)

■ PAGE WRITE (up to 8 Bytes)

■ BYTE, RANDOM and SEQUENTIAL READ Modes

■ Self-Timed Programming Cycle

■ Automatic Address Incrementing

■ Enhanced ESD/Latch-Up Behavior

■ 1 Million Erase/Write Cycles (minimum)

■ 10 Year Data Retention (minimum)