SST39VF160Q-70-4I-BK中文资料SST数据手册PDF规格书

PRODUCT DESCRIPTION

The SST39VF160Q/VF160 devices are 1M x 16 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160Q/VF160 write (Program or Erase) with a 2.7V-only power supply. The SST39VF160Q/VF160 conform to JEDEC standard pinouts for x16 memories.

FEATURES:

• Organized as 1 M X 16

• Single 2.7V-only Read and Write Operations

• VDDQ Power Supply to Support 5V I/O for SST39VF160Q

- VDDQ not available on SST39VF160

• Superior Reliability

- Endurance: 100,000 Cycles (typical)

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Current: 15 mA (typical)

- Standby Current: 3 µA (typical)

- Auto Low Power Mode: 3 µA (typical)

• Small Sector Erase Capability (512 sectors)

- Uniform 2 KWord sectors

• Block Erase Capability (32 blocks)

- Uniform 32 KWord blocks

• Fast Read Access Time:

- 70 and 90 ns

• Latched Address and Data

• Fast Sector Erase and Word Program:

- Sector Erase Time: 3 ms typical

- Block Erase Time: 7 ms typical

- Chip Erase Time: 15 ms typical

- Word Program time: 7 µs typical

- Chip Rewrite Time: 7 seconds

• Automatic Write Timing

- Internal Vpp Generation

• End of Write Detection

- Toggle Bit

- Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

- EEPROM Pinouts and command set

• Packages Available

- 48-Pin TSOP (12mm x 20mm)

- 6 x 8 Ball TFBGA