SST39VF160-55-4I-B3K中文资料SST数据手册PDF规格书

PRODUCT DESCRIPTION

The SST39LF/VF160 devices are 1M x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF160 write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF160 write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

FEATURES:

• Organized as 1M x16

• Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF160

– 2.7-3.6V for SST39VF160

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current: 15 mA (typical)

– Standby Current: 4 µA (typical)

– Auto Low Power Mode: 4 µA (typical)

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Fast Read Access Time

– 55 ns for SST39LF160

– 70 and 90 ns for SST39VF160

• Latched Address and Data

• Fast Erase and Word-Program

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time: 15 seconds (typical) for SST39LF/VF160

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)