SST32HF164-70-4E-TBK中文资料SST数据手册PDF规格书

PRODUCT DESCRIPTION

The SST32HF802/162/164 ComboMemory devices integrate a 512K x16 or 1M x16 CMOS flash memory bank with a 128K x16 or 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP), manufactured with SST’s proprietary, high performance SuperFlash technology.

FEATURES:

• MPF + SRAM ComboMemory

– SST32HF802: 512K x16 Flash + 128K x16 SRAM

– SST32HF162: 1M x16 Flash + 128K x16 SRAM

– SST32HF164: 1M x16 Flash + 256K x16 SRAM

• Single 2.7-3.3V Read and Write Operations

• Concurrent Operation

– Read from or write to SRAM while Erase/Program Flash

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 15 mA (typical) for Flash or SRAM Read

– Standby Current: 20 µA (typical)

• Flexible Erase Capability

– Uniform 2 KWord sectors

– Uniform 32 KWord size blocks

• Fast Read Access Times:

– Flash: 70 ns and 90 ns

– SRAM: 70 ns and 90 ns

• Latched Address and Data for Flash

• Flash Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time:

SST32HF802: 8 seconds (typical)

SST32HF162/164: 15 seconds (typical)

• Flash Automatic Erase and Program Timing

– Internal VPP Generation

• Flash End-of-Write Detection

– Toggle Bit

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard Command Set

• Package Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TBGA (10mm x 12mm)