N-Channel JFETs

DESCRIPTION The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise. FEATURES ●
Excellent High Frequency Gain: Gps 11.5 dB @ 450 MHz ●
Very Low Noise: 2.7 dB @

文件：74.43 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel JFET High Frequency Amplifier

FEATURES • Industry Standard Part in Low Cost Plastic Package • High Power Gain • Low Noise • Dynamic Range Greater Than 100dB • Easily Matched to 75Ω Input APPLICATIONS • VHF/UHF Amplifiers • Oscillators • Mixers

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Calogic

SINGLE N-CHANNEL HIGH FREQUENCY JFET

FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE NF = 2.7dB

文件：294.37 Kbytes 页数：2 Pages

LINEAR

N-Channel JFETs

DESCRIPTION The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise. Low-cost J series TO-226AA (TO-92) packaging supports automated assembly with tape-and-reel opti

文件：144.71 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel JFETs

DESCRIPTION The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise. Low-cost J series TO-226AA (TO-92) packaging supports automated assembly with tape-and-reel opti

文件：144.71 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2 Mbit Flash 1 Mbit SRAM ComboMemory

PRODUCT DESCRIPTION The SST31LF021/021E devices are a 256K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. Two pinout standards are available for these devices. The SST31LF021 conform to

文件：294.86 Kbytes 页数：24 Pages

SST

Silicon Storage Technology, Inc

2 Mbit Flash 1 Mbit SRAM ComboMemory

PRODUCT DESCRIPTION The SST31LF021/021E devices are a 256K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. Two pinout standards are available for these devices. The SST31LF021 conform to

文件：294.86 Kbytes 页数：24 Pages

SST

Silicon Storage Technology, Inc

2 Mbit Flash 1 Mbit SRAM ComboMemory

PRODUCT DESCRIPTION The SST31LF021/021E devices are a 256K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. Two pinout standards are available for these devices. The SST31LF021 conform to

文件：294.86 Kbytes 页数：24 Pages

SST

Silicon Storage Technology, Inc

2 Mbit Flash 1 Mbit SRAM ComboMemory

PRODUCT DESCRIPTION The SST31LF021/021E devices are a 256K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. Two pinout standards are available for these devices. The SST31LF021 conform to

文件：294.86 Kbytes 页数：24 Pages

SST

Silicon Storage Technology, Inc

2 Mbit Flash 1 Mbit SRAM ComboMemory

PRODUCT DESCRIPTION The SST31LF021/021E devices are a 256K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. Two pinout standards are available for these devices. The SST31LF021 conform to

文件：294.86 Kbytes 页数：24 Pages

SST

Silicon Storage Technology, Inc