4 Mbit ROM 1 Mbit / 256 Kbit SRAM ROM/RAM Combo

PRODUCT DESCRIPTION The SST30VR041/043 are ROM/RAM combo chips consisting of 4 Mbit Read Only Memory organized as 512 KBytes and a Static Random Access Memory organized as either 128 or 32 KBytes. Output Enable Input (OE#) is pin-shared with RAMCS# (RAM Enable Input) signal in order to maintain t

文件：99.67 Kbytes 页数：10 Pages

SST

Silicon Storage Technology, Inc

4 Mbit ROM 1 Mbit / 256 Kbit SRAM ROM/RAM Combo

PRODUCT DESCRIPTION The SST30VR041/043 are ROM/RAM combo chips consisting of 4 Mbit Read Only Memory organized as 512 KBytes and a Static Random Access Memory organized as either 128 or 32 KBytes. Output Enable Input (OE#) is pin-shared with RAMCS# (RAM Enable Input) signal in order to maintain t

文件：99.67 Kbytes 页数：10 Pages

SST

Silicon Storage Technology, Inc

4 Mbit ROM 1 Mbit / 256 Kbit SRAM ROM/RAM Combo

PRODUCT DESCRIPTION The SST30VR041/043 are ROM/RAM combo chips consisting of 4 Mbit Read Only Memory organized as 512 KBytes and a Static Random Access Memory organized as either 128 or 32 KBytes. Output Enable Input (OE#) is pin-shared with RAMCS# (RAM Enable Input) signal in order to maintain t

文件：99.67 Kbytes 页数：10 Pages

SST

Silicon Storage Technology, Inc

4 Mbit ROM 1 Mbit / 256 Kbit SRAM ROM/RAM Combo

PRODUCT DESCRIPTION The SST30VR041/043 are ROM/RAM combo chips consisting of 4 Mbit Read Only Memory organized as 512 KBytes and a Static Random Access Memory organized as either 128 or 32 KBytes. Output Enable Input (OE#) is pin-shared with RAMCS# (RAM Enable Input) signal in order to maintain t

文件：99.67 Kbytes 页数：10 Pages

SST

Silicon Storage Technology, Inc

4 Mbit ROM 1 Mbit / 256 Kbit SRAM ROM/RAM Combo

PRODUCT DESCRIPTION The SST30VR041/043 are ROM/RAM combo chips consisting of 4 Mbit Read Only Memory organized as 512 KBytes and a Static Random Access Memory organized as either 128 or 32 KBytes. Output Enable Input (OE#) is pin-shared with RAMCS# (RAM Enable Input) signal in order to maintain t

文件：99.67 Kbytes 页数：10 Pages

SST

Silicon Storage Technology, Inc

4 Mbit ROM 1 Mbit / 256 Kbit SRAM ROM/RAM Combo

PRODUCT DESCRIPTION The SST30VR041/043 are ROM/RAM combo chips consisting of 4 Mbit Read Only Memory organized as 512 KBytes and a Static Random Access Memory organized as either 128 or 32 KBytes. Output Enable Input (OE#) is pin-shared with RAMCS# (RAM Enable Input) signal in order to maintain t

文件：99.67 Kbytes 页数：10 Pages

SST

Silicon Storage Technology, Inc

4 Mbit ROM 1 Mbit / 256 Kbit SRAM ROM/RAM Combo

PRODUCT DESCRIPTION The SST30VR041/043 are ROM/RAM combo chips consisting of 4 Mbit Read Only Memory organized as 512 KBytes and a Static Random Access Memory organized as either 128 or 32 KBytes. Output Enable Input (OE#) is pin-shared with RAMCS# (RAM Enable Input) signal in order to maintain t

文件：99.67 Kbytes 页数：10 Pages

SST

Silicon Storage Technology, Inc

N-Channel JFETs

DESCRIPTION The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise. FEATURES ●
Excellent High Frequency Gain: Gps 11.5 dB @ 450 MHz ●
Very Low Noise: 2.7 dB @

文件：74.43 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel JFET High Frequency Amplifier

FEATURES • Industry Standard Part in Low Cost Plastic Package • High Power Gain • Low Noise • Dynamic Range Greater Than 100dB • Easily Matched to 75Ω Input APPLICATIONS • VHF/UHF Amplifiers • Oscillators • Mixers

文件：26.8 Kbytes 页数：2 Pages

CALOGIC

SINGLE N-CHANNEL HIGH FREQUENCY JFET

FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE NF = 2.7dB

文件：294.37 Kbytes 页数：2 Pages

LINEAR