2 Mbit (256K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro

文件：326.04 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

2 Mbit (256K x8) Page-Mode EEPROM

SST

超捷

2 Mbit (256K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro

文件：326.04 Kbytes 页数：26 Pages

SST

Silicon Storage Technology, Inc

2 Mbit (256K x 8) page-mode EEPROM

SST

超捷