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SST29EE512-70-4C-PH	文件：423.31 Kbytes Page：26 Pages	512 Kbit (64K x8) Page-Write EEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro	SST Silicon Storage Technology，Inc.
SST29EE512-70-4C-PH	文件：423.31 Kbytes Page：26 Pages	512 Kbit (64K x8) Page-Write EEPROM	SST Silicon Storage Technology，Inc.
SST29EE512-70-4C-PHE	文件：423.31 Kbytes Page：26 Pages	512 Kbit (64K x8) Page-Write EEPROM	SST Silicon Storage Technology，Inc.
SST29EE512-70-4C-EH	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM	SST Silicon Storage Technology，Inc.
SST29EE512-70-4C-EH	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro	SST Silicon Storage Technology，Inc.
SST29EE512-70-4C-EHE	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro	SST Silicon Storage Technology，Inc.
SST29EE512-70-4C-NH	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro	SST Silicon Storage Technology，Inc.
SST29EE512-70-4C-NH	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM	SST Silicon Storage Technology，Inc.
SST29EE512-70-4C-NHE	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro	SST Silicon Storage Technology，Inc.
SST29EE512-70-4C-NHE	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM	SST Silicon Storage Technology，Inc.
SST29EE512-70-4I-EH	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro	SST Silicon Storage Technology，Inc.
SST29EE512-70-4I-EH	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM	SST Silicon Storage Technology，Inc.
SST29EE512-70-4I-EHE	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM	SST Silicon Storage Technology，Inc.
SST29EE512-70-4I-EHE	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro	SST Silicon Storage Technology，Inc.
SST29EE512-70-4I-NH	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM	SST Silicon Storage Technology，Inc.
SST29EE512-70-4I-NH	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro	SST Silicon Storage Technology，Inc.
SST29EE512-70-4I-NHE	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro	SST Silicon Storage Technology，Inc.
SST29EE512-70-4I-NHE	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM	SST Silicon Storage Technology，Inc.
SST29EE512-70-4I-PHE	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM	SST Silicon Storage Technology，Inc.

详细参数

型号：
SST29EE512-70-4C-PH
功能描述：
闪存 64K X 8 70ns
RoHS：
否
制造商：
ON Semiconductor
数据总线宽度：
1 bit
存储类型：
Flash
存储容量：
2 MB
结构：
256 K x 8
接口类型：
SPI
电源电压-最大：
3.6 V
电源电压-最小：
2.3 V
最大工作电流：
15 mA
工作温度：
- 40 C to + 85 C
安装风格：
SMD/SMT
封装：
Reel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市壹芯创科技有限公司	SST29EE512-70-4C-PH	SST	22+	DIP	8000	原装现货库存.价格优势	询价
深圳市百视威讯电子科技有限公司	SST29EE512-70-4C-PH		23+	N/A	45990	正品授权货源可靠	询价
深圳市近平电子有限公司	SST29EE512-70-4C-PH	SST	12+	DIP	10400	原装现货/特价	询价
深圳市维尔达电子有限公司	SST29EE512-70-4C-PH	SST	2023+	DIP	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市汇莱威科技有限公司	SST29EE512-70-4C-PH	SST		DIP	265209	假一罚十,原包原标签,常备现货	询价
深圳市芯诚实创科技有限公司	SST29EE512-70-4C-PH	SST	2022	DIP-	4850	全新原装现货	询价
深圳市威尔健半导体有限公司	SST29EE512-70-4C-PH	SST	23+	DIP	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	SST29EE512-70-4C-PH	SST	21+	DIP	10000	原装现货假一罚十	询价
深圳市创盛芯科技有限公司	SST29EE512-70-4C-PH	SST	22+	DIP	75	原装现货假一赔十	询价
深圳廊盛科技有限公司	SST29EE512-70-4C-PH	SST	2022	DIP	80000	原装现货,OEM渠道,欢迎咨询	询价

更多SST29EE512-70-4C-PH供应商更新时间2024-4-27 16:10:00

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