N-Channel Enhancement Mode Power Mos.FET

Description The SST2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SST2602 is universally used for all commercial-industrial applications. Features * Low On-Resistance * Capable of 2.5V Gate Drive

文件：483.97 Kbytes 页数：4 Pages

SECOS

喜可士

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：481.46 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Power Mos.FET

Secos

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8-bit Integrated Microcontroller

文件：591.02 Kbytes 页数：34 Pages

Sitronix

矽创电子

N-Channel Enhancement Mode Power Mos.FET

文件：620.63 Kbytes 页数：4 Pages

SECOS

喜可士

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：481.46 Kbytes 页数：9 Pages

VBSEMI

微碧半导体