P-Channel Enhancement Mode Power Mos.FET

Description The SST2625 utiltzed advance processing techniques to achieve the lowest The SST2625 is universally used for all commercial-industrial applications. possible on-resistance, extermely efficient and cost-effectiveness device. Features * Low On-Resistance * Low Gate Charge

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SECOS

喜可士

Dual P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications • Battery Switch for Portable Devices • Computers - Bus Switch - Load Switch

文件：525.03 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

10 to 11GHz 20W GaN Power Amplifier

文件：615.81 Kbytes 页数：14 Pages

TRIQUINT

10 to 11 GHz, 17 W GaN Power Amplifier

文件：578.2 Kbytes 页数：15 Pages

TRIQUINT

FAMILY OF LOW-POWER WIDE BANDWIDTH SINGLE SUPPLY OPERATIONAL AMPLIFIERS WITH SHUTDOWN

文件：1.09099 Mbytes 页数：25 Pages

TI

德州仪器