4A , 600 V , RDS(ON) 2.4
N-Channel Enhancement Mode Power MOSFET

文件：465 Kbytes 页数：4 Pages

SECOS

喜可士

4A , 600 V , RDS(ON) 2.4 \u0001 N-Channel Enhancement Mode Power MOSFET

Secos

喜可士

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：890.05 Kbytes 页数：10 Pages

FAIRCHILD

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isc N-Channel MOSFET Transistor

文件：270.87 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS= 600V Lower RDS(ON) : 2.037Ω (Typ.) W m

文件：262.97 Kbytes 页数：7 Pages

FAIRCHILD

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