600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse

文件：915.55 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 μA (Max.) @ VDS = 600V ■ Lower RDS(ON) : 0.977 Ω (Typ.)

文件：234.51 Kbytes 页数：9 Pages

SAMSUNG

三星

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse

文件：915.55 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：280.63 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：280.63 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

Samsung

三星